IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263

IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IXFA80N25X3
Enrgtech Part No:
ET100631530
Warranty:
Manufacturer
$ 11.58 $ 11.58
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
250V
Series:
HiperFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
16mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
390W
Typical Gate Charge Qg @ Vgs:
83nC
Forward Voltage Vf:
1.4V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
11.05 mm
Height:
4.83mm
Length:
10.41mm
Distrelec Product Id:
30253297
Automotive Standard:
No
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0900766b815e9b4c.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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