IXYS Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3

IXYS Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3

Manufacturer:
Manufacturer Part No:
IXFB110N60P3
Enrgtech Part No:
ET100622929
Warranty:
Manufacturer
$ 22.40 $ 22.40
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
600V
Package Type:
PLUS264
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
56mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.5V
Maximum Power Dissipation Pd:
1.89kW
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
245nC
Maximum Operating Temperature:
150°C
Width:
5.31 mm
Standards/Approvals:
No
Height:
26.59mm
Length:
20.29mm
Distrelec Product Id:
30253299
Automotive Standard:
No
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0900766b812e628e.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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