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si8802db-t2-e1 Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
si8802db-t2-e1 Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1

Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1

Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1

Manufacturer:
Vishay
Manufacturer Part No:
SI8802DB-T2-E1
Enrgtech Part No:
ET100622628
Warranty:
Manufacturer
$ 0.30 $ 0.30
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.5A
Maximum Drain Source Voltage Vds:
8V
Package Type:
MICRO FOOT
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
54mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
0.6W
Typical Gate Charge Qg @ Vgs:
4.3nC
Maximum Gate Source Voltage Vgs:
5 V
Maximum Operating Temperature:
150°C
Length:
0.8mm
Width:
0.8 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000006403505.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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