Enrgtech
Enrgtech

Deliver to

United States

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
si2369ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3
si2369ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2369DS-T1-GE3
Enrgtech Part No:
ET100621984
Warranty:
Manufacturer
$ 0.34 $ 0.34
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7.6A
Maximum Drain Source Voltage Vds:
30V
Series:
TrenchFET
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
40mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
11.4nC
Maximum Power Dissipation Pd:
1.6W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Length:
3.04mm
Standards/Approvals:
No
Width:
2.64 mm
Height:
1.12mm
Automotive Standard:
No
pdf icon
A700000006403513.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews