Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8

For more information please check the datasheets.

Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8

Manufacturer:

Vishay

Manufacturer Part No:

Si4425FDY-T1-GE3

Enrgtech Part No:

ET100580533

Warranty:

Manufacturer

$ 0.75

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Channel Type:

Type P

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

18.3A

Maximum Drain Source Voltage Vds:

30V

Series:

TrenchFET Gen IV

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

16mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

4.8W

A700000006826734.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8

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