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rfd12n06rlesm9a onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A
rfd12n06rlesm9a onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A
rfd12n06rlesm9a onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A

onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A

onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A

Manufacturer:
onsemi
Manufacturer Part No:
RFD12N06RLESM9A
Enrgtech Part No:
ET100573487
Warranty:
Manufacturer
$ 0.80 $ 0.80
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
UltraFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
75mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
12nC
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
49W
Maximum Operating Temperature:
175°C
Height:
2.39mm
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
0900766b812cff64.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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