onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A

onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A

Manufacturer:
Manufacturer Part No:
RFD3055LESM9A
Enrgtech Part No:
ET100573461
Warranty:
Manufacturer
$ 0.44 $ 0.44
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
11A
Maximum Drain Source Voltage Vds:
60V
Series:
RFD3055LESM
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
107mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
38W
Typical Gate Charge Qg @ Vgs:
9.4nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Operating Temperature:
175°C
Length:
6.73mm
Height:
2.39mm
Width:
6.22 mm
Standards/Approvals:
No
Automotive Standard:
No
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0900766b812cffbc.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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