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ixfn24n100 IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227
ixfn24n100 IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

Manufacturer:
IXYS
Manufacturer Part No:
IXFN24N100
Enrgtech Part No:
ET100568456
Warranty:
Manufacturer
$ 50.17 $ 50.17
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
24A
Maximum Drain Source Voltage Vds:
1kV
Package Type:
SOT-227
Series:
HiperFET
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
390mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
267nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
568W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
150°C
Height:
9.6mm
Standards/Approvals:
No
Width:
25.42 mm
Length:
38.23mm
Automotive Standard:
No
pdf icon
0900766b80a3c57d.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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