IXYS Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227

IXYS Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227

Manufacturer:
Manufacturer Part No:
IXFN80N60P3
Enrgtech Part No:
ET100550487
Warranty:
Manufacturer
$ 38.32 $ 38.32
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
66A
Maximum Drain Source Voltage Vds:
600V
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
70mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
960W
Typical Gate Charge Qg @ Vgs:
190nC
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
150°C
Length:
38.23mm
Standards/Approvals:
No
Width:
25.07 mm
Height:
9.6mm
Distrelec Product Id:
30253380
Automotive Standard:
No
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0900766b812e62a8.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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