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si2302dds-t1-ge3 Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
si2302dds-t1-ge3 Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2302DDS-T1-GE3
Enrgtech Part No:
ET100534609
Warranty:
Manufacturer
$ 0.39 $ 0.39
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Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.9A
Maximum Drain Source Voltage Vds:
20V
Series:
TrenchFET
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.075Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±8 V
Maximum Power Dissipation Pd:
0.86W
Typical Gate Charge Qg @ Vgs:
3.5nC
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
1.4 mm
Length:
3.04mm
Standards/Approvals:
IEC 61249-2-21, RoHS
Height:
1.02mm
Automotive Standard:
No
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0900766b8161c959.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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