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sth310n10f7-6 STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
sth310n10f7-6 STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
sth310n10f7-6 STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6

Manufacturer:
STMicroelectronics
Manufacturer Part No:
STH310N10F7-6
Enrgtech Part No:
ET100355309
Warranty:
Manufacturer
$ 5.42 $ 5.42
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
100V
Package Type:
H2PAK
Series:
STripFET H7
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
2.3mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
315W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
180nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
15.25mm
Standards/Approvals:
No
Height:
4.8mm
Width:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Automotive Standard:
No
pdf icon
0900766b8135fbe4.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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