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dmn6066ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13
dmn6066ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13
dmn6066ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMN6066SSD-13
Enrgtech Part No:
ET100311595
Warranty:
Manufacturer
$ 0.59 $ 0.59
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
97mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.89V
Minimum Operating Temperature:
150°C
Maximum Power Dissipation Pd:
2.14W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
5.4nC
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Standards/Approvals:
MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020
Width:
4 mm
Height:
1.5mm
Length:
5mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b81321dd4.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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