onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC FDS8958B

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC FDS8958B

Manufacturer:
Manufacturer Part No:
FDS8958B
Enrgtech Part No:
ET100309636
Warranty:
Manufacturer
$ 0.84 $ 0.84
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Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
6.4A
Maximum Drain Source Voltage Vds:
30V
Series:
PowerTrench
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.8V
Maximum Gate Source Voltage Vgs:
±25 V
Typical Gate Charge Qg @ Vgs:
12nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
2W
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Length:
4.9mm
Standards/Approvals:
No
Width:
3.9 mm
Height:
1.575mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b812cf822.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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