Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SiR580DP-T1-RE3
Enrgtech Part No:
ET100298218
Warranty:
Manufacturer
$ 2.88 $ 2.88
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
146A
Maximum Drain Source Voltage Vds:
80V
Package Type:
SO-8
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2.7mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
50.6nC
Maximum Power Dissipation Pd:
104W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282731.pdf(datasheets)
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