Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

Manufacturer:
Manufacturer Part No:
SiHG080N60E-GE3
Enrgtech Part No:
ET100298018
Warranty:
Manufacturer
$ 5.96 $ 5.96
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-247
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
42nC
Maximum Power Dissipation Pd:
ZNR
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282651.pdf(datasheets)
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