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sihd5n80ae-ge3 Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
sihd5n80ae-ge3 Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHD5N80AE-GE3
Enrgtech Part No:
ET100297987
Warranty:
Manufacturer
$ 1.05 $ 1.05
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
850V
Package Type:
TO-252
Series:
E
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.35Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
11nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
62.5W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282603.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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