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siha5n80ae-ge3 Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
siha5n80ae-ge3 Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHA5N80AE-GE3
Enrgtech Part No:
ET100297969
Warranty:
Manufacturer
$ 1.98 $ 1.98
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
3A
Maximum Drain Source Voltage Vds:
850V
Series:
E
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.35Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
29W
Typical Gate Charge Qg @ Vgs:
11nC
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282599.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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