Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Manufacturer:
Manufacturer Part No:
Si7252ADP-T1-GE3
Enrgtech Part No:
ET100297943
Warranty:
Manufacturer
$ 1.94 $ 1.94
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
13.1A
Maximum Drain Source Voltage Vds:
100V
Series:
TrenchFET
Package Type:
PowerPAK 1212
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
18.6mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
100V
Typical Gate Charge Qg @ Vgs:
13.1nC
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Dual N Channel Mosfet
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000008282571.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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