Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

Manufacturer:
Manufacturer Part No:
SI7116BDN-T1-GE3
Enrgtech Part No:
ET100297942
Warranty:
Manufacturer
$ 1.11 $ 1.11
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
65A
Maximum Drain Source Voltage Vds:
40V
Series:
TrenchFET
Package Type:
PowerPAK 1212
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
7.4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
31.4nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
62.5W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
0.75mm
Automotive Standard:
No
pdf icon
A700000008282543.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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