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sihg24n80ae-ge3 Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3
sihg24n80ae-ge3 Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHG24N80AE-GE3
Enrgtech Part No:
ET100297879
Warranty:
Manufacturer
$ 4.99 $ 4.99
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
21A
Maximum Drain Source Voltage Vds:
850V
Series:
E
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
184mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
59nC
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
208W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282539.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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