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sihh080n60e-t1-ge3 Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
sihh080n60e-t1-ge3 Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHH080N60E-T1-GE3
Enrgtech Part No:
ET100297871
Warranty:
Manufacturer
$ 7.11 $ 7.11
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
32A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK
Series:
E
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
42nC
Maximum Power Dissipation Pd:
184W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282655.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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