onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1

onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1

Manufacturer:
Manufacturer Part No:
NTBG160N120SC1
Enrgtech Part No:
ET100294415
Warranty:
Manufacturer
$ 5.76 $ 5.76
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
19.5A
Maximum Drain Source Voltage Vds:
1200V
Package Type:
TO-263
Series:
NTB
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
225mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
3.9V
Maximum Power Dissipation Pd:
136W
Maximum Gate Source Voltage Vgs:
25 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
33.8nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
Pb-Free, RoHS
Height:
4.3mm
Width:
9.7 mm
Length:
15.1mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007080868.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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