Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

Manufacturer:
Manufacturer Part No:
BSZ068N06NSATMA1
Enrgtech Part No:
ET100293498
Warranty:
Manufacturer
$ 0.91 $ 0.91
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS-TM3
Package Type:
TSDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
6.8mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
46W
Typical Gate Charge Qg @ Vgs:
17nC
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
1.2mm
Width:
6.1 mm
Length:
5.35mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007835335.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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