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ipd60r280p7atma1 Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1
ipd60r280p7atma1 Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD60R280P7ATMA1
Enrgtech Part No:
ET100293371
Warranty:
Manufacturer
$ 1.39 $ 1.39
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-252
Series:
CoolMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
18nC
Maximum Power Dissipation Pd:
53W
Forward Voltage Vf:
0.9V
Width:
6.22 mm
Height:
2.41mm
Standards/Approvals:
No
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007835291.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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