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sihb125n60ef-ge3 Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
sihb125n60ef-ge3 Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB125N60EF-GE3
Enrgtech Part No:
ET100286460
Warranty:
Manufacturer
$ 2.83 $ 2.83
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
25A
Maximum Drain Source Voltage Vds:
600V
Series:
SiHB125N60EF
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
125mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
31nC
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
179W
Maximum Operating Temperature:
150°C
Length:
14.61mm
Width:
9.65 mm
Standards/Approvals:
No
Height:
4.06mm
Automotive Standard:
No
pdf icon
A700000007054067.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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