Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

Manufacturer:
Manufacturer Part No:
IPD50P04P4L11ATMA2
Enrgtech Part No:
ET100265580
Warranty:
Manufacturer
$ 1.75 $ 1.75
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
-50A
Maximum Drain Source Voltage Vds:
-40V
Series:
IPD
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
10.6mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
45nC
Forward Voltage Vf:
-1V
Maximum Gate Source Voltage Vgs:
5 V
Maximum Power Dissipation Pd:
58W
Maximum Operating Temperature:
175°C
Standards/Approvals:
DIN IEC 68-1, RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000009481216.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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