Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

Manufacturer:
Manufacturer Part No:
IRF7343TRPBF
Enrgtech Part No:
ET100258561
Warranty:
Manufacturer
$ 1.04 $ 1.04
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Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
4.7A
Maximum Drain Source Voltage Vds:
55V
Series:
IRF7343PbF
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
170mΩ
Channel Mode:
Depletion
Maximum Power Dissipation Pd:
2W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
2695
Typical Gate Charge Qg @ Vgs:
24nC
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
5mm
Height:
1.5mm
Width:
4 mm
Number of Elements per Chip:
1
Automotive Standard:
No
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0900766b8172a11f.pdf(datasheets)
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0900766b81740ac3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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