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ipd25cn10ngatma1 Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1
ipd25cn10ngatma1 Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1

Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1

Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD25CN10NGATMA1
Enrgtech Part No:
ET100258559
Warranty:
Manufacturer
$ 0.99 $ 0.99
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
100V
Series:
IPD25CN10N G
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
0.05µA
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1V
Maximum Power Dissipation Pd:
71W
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
7.47 mm
Standards/Approvals:
No
Length:
6.73mm
Height:
2.41mm
Automotive Standard:
No
pdf icon
0900766b8172a107.pdf(datasheets)
pdf icon
0900766b81740aac.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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