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ipd200n15n3gatma1 Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
ipd200n15n3gatma1 Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD200N15N3GATMA1
Enrgtech Part No:
ET100258553
Warranty:
Manufacturer
$ 1.46 $ 1.46
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
150V
Package Type:
TO-252
Series:
IPD200N15N3 G
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
20mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
150W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Operating Temperature:
175°C
Length:
10.36mm
Standards/Approvals:
No
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Automotive Standard:
No
pdf icon
0900766b8172a104.pdf(datasheets)
pdf icon
0900766b81740aa9.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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