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ipd053n08n3gatma1 Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
ipd053n08n3gatma1 Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1

Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1

Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD053N08N3GATMA1
Enrgtech Part No:
ET100258547
Warranty:
Manufacturer
$ 1.69 $ 1.69
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
80V
Package Type:
TO-252
Series:
IPD053N08N3 G
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
9.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
52nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
150W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1V
Maximum Operating Temperature:
175°C
Length:
6.73mm
Width:
7.36 mm
Height:
2.41mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8165ffae.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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