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ipd80r1k0ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
ipd80r1k0ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
ipd80r1k0ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R1K0CEATMA1
Enrgtech Part No:
ET100226893
Warranty:
Manufacturer
$ 1.09 $ 1.09
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.7A
Maximum Drain Source Voltage Vds:
800V
Series:
CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
950mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
31nC
Maximum Power Dissipation Pd:
EL Connector Housing
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Length:
6.73mm
Height:
2.41mm
Standards/Approvals:
No
Width:
6.22 mm
Automotive Standard:
No
pdf icon
0900766b814ae96e.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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