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bsz086p03ns3egatma1 Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1
bsz086p03ns3egatma1 Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSZ086P03NS3EGATMA1
Enrgtech Part No:
ET100226217
Warranty:
Manufacturer
$ 0.81 $ 0.81
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
40A
Maximum Drain Source Voltage Vds:
30V
Series:
0.38mm
Package Type:
TSDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
13.4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
43.2nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
69W
Maximum Gate Source Voltage Vgs:
25 V
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
150°C
Length:
3.4mm
Height:
1.1mm
Width:
3.4 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b813293a8.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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