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bsc060p03ns3egatma1 Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1
bsc060p03ns3egatma1 Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1
bsc060p03ns3egatma1 Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC060P03NS3EGATMA1
Enrgtech Part No:
ET100225740
Warranty:
Manufacturer
$ 0.95 $ 0.95
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
30V
Series:
0.38mm
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
9.6mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
61nC
Forward Voltage Vf:
-1.1V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
EL Connector Housing
Maximum Operating Temperature:
150°C
Width:
5.35 mm
Length:
6.35mm
Height:
1.1mm
Standards/Approvals:
No
Distrelec Product Id:
304-44-409
Automotive Standard:
No
pdf icon
0900766b8132937f.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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