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ipd042p03l3gatma1 Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
ipd042p03l3gatma1 Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
ipd042p03l3gatma1 Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD042P03L3GATMA1
Enrgtech Part No:
ET100224844
Warranty:
Manufacturer
$ 1.37 $ 1.37
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
70A
Maximum Drain Source Voltage Vds:
30V
Package Type:
TO-252
Series:
0.38mm
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
6.8mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
131nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
150W
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
175°C
Width:
5.97 mm
Length:
6.73mm
Standards/Approvals:
No
Height:
2.41mm
Automotive Standard:
No
pdf icon
0900766b813299e2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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