Enrgtech
Enrgtech

Deliver to

United States

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
ipd90n03s4l02atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1
ipd90n03s4l02atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1
ipd90n03s4l02atma1 Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1

Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1

Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD90N03S4L02ATMA1
Enrgtech Part No:
ET100223542
Warranty:
Manufacturer
$ 1.40 $ 1.40
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
30V
Series:
OptiMOS-T2
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.6mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
380
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
136W
Maximum Gate Source Voltage Vgs:
16 V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Height:
2.3mm
Standards/Approvals:
No
Length:
6.5mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b8132f093.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews