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ipd60r1k0ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
ipd60r1k0ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
ipd60r1k0ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD60R1K0CEAUMA1
Enrgtech Part No:
ET100222749
Warranty:
Manufacturer
$ 0.53 $ 0.53
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.8A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-40°C
Typical Gate Charge Qg @ Vgs:
ROX3S
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
61W
Maximum Operating Temperature:
150°C
Height:
2.41mm
Standards/Approvals:
No
Length:
6.73mm
Width:
6.22 mm
Automotive Standard:
No
pdf icon
0900766b81560dab.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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