Infineon Dual HEXFET 2 Type N-Channel MOSFET, 9.1 A, 30 V Enhancement, 8-Pin SOIC IRF7907TRPBF

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 9.1 A, 30 V Enhancement, 8-Pin SOIC IRF7907TRPBF

Manufacturer:
Manufacturer Part No:
IRF7907TRPBF
Enrgtech Part No:
ET100222668
Warranty:
Manufacturer
$ 0.79 $ 0.79
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9.1A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
20.5mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
Ladder
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Transistor Configuration:
Dual
Height:
1.5mm
Standards/Approvals:
No
Width:
4 mm
Length:
5mm
Number of Elements per Chip:
2
Distrelec Product Id:
304-36-987
Automotive Standard:
No
pdf icon
0900766b81560cee.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews