Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

Manufacturer:
Manufacturer Part No:
IPT004N03LATMA1
Enrgtech Part No:
ET100222548
Warranty:
Manufacturer
$ 4.26 $ 4.26
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
300A
Maximum Drain Source Voltage Vds:
30V
Series:
OptiMOS
Package Type:
HSOF
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
500μΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Maximum Power Dissipation Pd:
300W
Typical Gate Charge Qg @ Vgs:
252nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Height:
2.4mm
Length:
10.1mm
Standards/Approvals:
No
Width:
10.58 mm
Automotive Standard:
No
pdf icon
0900766b81560ce5.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews