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ipn50r950ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1
ipn50r950ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1
ipn50r950ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPN50R950CEATMA1
Enrgtech Part No:
ET100222488
Warranty:
Manufacturer
$ 0.52 $ 0.52
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
383Ω
Maximum Drain Source Voltage Vds:
550V
Package Type:
SOT-223
Series:
CoolMOS CE
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
950mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
5W
Minimum Operating Temperature:
-40°C
Typical Gate Charge Qg @ Vgs:
± 20%
Forward Voltage Vf:
2 x 2 x 0.5mm
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.7mm
Height:
1.7mm
Width:
3.7 mm
Automotive Standard:
No
pdf icon
0900766b81560d9f.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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