Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

For more information please check the datasheets.

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IGT65R140D2ATMA1

Enrgtech Part No:

ET100219989

Warranty:

Manufacturer

$ 3.21

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

13A

Maximum Drain Source Voltage Vds:

650V

Package Type:

PG-HSOF-8

Series:

IGT65

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.17Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

47W

A700000013462458.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

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