Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

For more information please check the datasheets.

Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IGT65R045D2ATMA1

Enrgtech Part No:

ET100219986

Warranty:

Manufacturer

$ 8.76

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

38A

Maximum Drain Source Voltage Vds:

650V

Package Type:

PG-HSOF-8

Series:

IGT65

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.054Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

10 V

A700000013462422.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

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