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igt65r055d2atma1 Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
igt65r055d2atma1 Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1

Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1

Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IGT65R055D2ATMA1
Enrgtech Part No:
ET100219981
Warranty:
Manufacturer
$ 6.90 $ 6.90
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
31A
Maximum Drain Source Voltage Vds:
650V
Series:
IGT65
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.066Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
106W
Typical Gate Charge Qg @ Vgs:
4.7nC
Maximum Gate Source Voltage Vgs:
-10 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC for Industrial Applications
Automotive Standard:
No
pdf icon
A700000013462442.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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