Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

Manufacturer:
Manufacturer Part No:
IGOT65R055D2AUMA1
Enrgtech Part No:
ET100219531
Warranty:
Manufacturer
$ 7.18 $ 7.18
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
28A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PG-DSO-20
Series:
IGOT65
Mount Type:
Surface
Pin Count:
20
Maximum Drain Source Resistance Rds:
0.066Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
4.7nC
Maximum Power Dissipation Pd:
89W
Maximum Gate Source Voltage Vgs:
10 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC for Industrial Applications
Automotive Standard:
No
pdf icon
A700000013462386.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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