Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1

For more information please check the datasheets.

Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1

Manufacturer:

Infineon

Manufacturer Part No:

FF6MR20W2M1HB70BPSA1

Enrgtech Part No:

ET100219425

Warranty:

Manufacturer

$ 478.70

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

150A

Maximum Drain Source Voltage Vds:

1200V

Series:

FF6MR

Package Type:

AG-EASY2B

Mount Type:

Through Hole

Maximum Drain Source Resistance Rds:

10mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

20mW

Forward Voltage Vf:

5.35V

Minimum Operating Temperature:

-40°C

A700000013461540.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1

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