Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK SIRS5702DP-T1-RE3

Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK SIRS5702DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIRS5702DP-T1-RE3
Enrgtech Part No:
ET100216697
Warranty:
Manufacturer
$ 1.89 $ 1.89
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Channel Type:
Type N
Product Type:
Single MOSFETs
Maximum Continuous Drain Current Id:
119A
Maximum Drain Source Voltage Vds:
150V
Package Type:
PowerPAK
Series:
SIRS5702DP
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0072Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
44nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
225 mW
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Height:
0.95mm
Length:
6.10mm
Standards/Approvals:
No
Width:
5.10 mm
Automotive Standard:
No
pdf icon
A700000014240920.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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