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siss5812dn-t1-ge3 Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3
siss5812dn-t1-ge3 Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISS5812DN-T1-GE3
Enrgtech Part No:
ET100216694
Warranty:
Manufacturer
$ 0.52 $ 0.52
Checking for live stock
Channel Type:
Type N
Product Type:
Single MOSFETs
Maximum Continuous Drain Current Id:
42.8A
Maximum Drain Source Voltage Vds:
80V
Series:
SISS5812DN
Package Type:
PowerPAK
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0135Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
44.6W
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Operating Temperature:
150°C
Width:
3.40 mm
Length:
3.40mm
Standards/Approvals:
No
Height:
0.83mm
Automotive Standard:
No
pdf icon
A700000014239388.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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