Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3

Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR5812DP-T1-RE3
Enrgtech Part No:
ET100216678
Warranty:
Manufacturer
$ 0.49 $ 0.49
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Product Type:
Single MOSFETs
Channel Type:
Type N
Maximum Continuous Drain Current Id:
45.3A
Maximum Drain Source Voltage Vds:
80V
Package Type:
PowerPAK
Series:
SIR5812DP
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0135Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
7.5nC
Forward Voltage Vf:
1.1V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
50W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
5.15mm
Height:
1.04mm
Width:
6.15 mm
Automotive Standard:
No
pdf icon
A700000014240729.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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