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sihb155n60ef-ge3 Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263
sihb155n60ef-ge3 Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

Manufacturer:
Vishay
Manufacturer Part No:
SIHB155N60EF-GE3
Enrgtech Part No:
ET100216649
Warranty:
Manufacturer
$ 5.48 $ 5.48
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Product Type:
Single MOSFETs
Channel Type:
Type N
Maximum Continuous Drain Current Id:
21A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-263
Series:
EF
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.159Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Power Dissipation Pd:
179W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Width:
9.65 mm
Length:
2.79mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000014240241.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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