Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3

Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3

Manufacturer:
Manufacturer Part No:
SI3122DV-T1-GE3
Enrgtech Part No:
ET100214658
Warranty:
Manufacturer
$ 0.14 $ 0.14
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Channel Type:
Type N
Product Type:
Single MOSFETs
Maximum Continuous Drain Current Id:
1.95A
Maximum Drain Source Voltage Vds:
100V
Series:
SI3122DV
Package Type:
PowerPAK
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
0.160Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
2.9nC
Maximum Power Dissipation Pd:
1.34W
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
2.98 mm
Length:
3.1mm
Automotive Standard:
No
pdf icon
A700000014240095.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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