Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

Manufacturer:
Manufacturer Part No:
IPD95R450P7ATMA1
Enrgtech Part No:
ET100197106
Warranty:
Manufacturer
$ 2.02 $ 2.02
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
14A
Maximum Drain Source Voltage Vds:
950V
Package Type:
TO-252
Series:
IPD
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
450mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
35nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
104W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
6.73mm
Standards/Approvals:
No
Height:
2.41mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007497878.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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